Ferroelectric channel field effect transistor

A semiconductor device, comprising:

• a ferroelectric structure comprising a first source/drain region, a second source/drain region, and a channel region sandwiched between the first source/drain region and the second source/drain region along a direction;
• a front gate dielectric layer disposed over the channel region;
• a front gate electrode disposed over the front gate dielectric layer;
• a first source/drain contact over the first source/drain region;
• a second source/drain contact over the second source/drain region;
• a back gate dielectric layer disposed below and in contact with a bottom surface of the ferroelectric structure;
• and
• a back gate electrode disposed below and in contact with a bottom surface of the back gate dielectric layer,
• wherein the front gate dielectric layer comprises a first width along the direction and the back gate dielectric layer comprises a second width along the direction,
• wherein the first width is greater than the second width.

A semiconductor device, comprising:

• a ferroelectric structure comprising a first source/drain region, a second source/drain region, and a channel region sandwiched between the first source/drain region and the second source/drain region along a direction;
• a front gate dielectric layer disposed over the channel region;
• a front gate electrode disposed over the front gate dielectric layer;
• a first source/drain contact over the first source/drain region;
• a second source/drain contact over the second source/drain region;
• a back gate dielectric layer disposed below and in contact with a bottom surface of the ferroelectric structure;
• and
• a back gate electrode disposed below and in contact with a bottom surface of the back gate dielectric layer,
• wherein the ferroelectric structure comprises III-V semiconductor and a dopant,
• wherein the front gate dielectric layer comprises a first thickness,
• wherein the back gate dielectric layer comprises a second thickness greater than the first thickness.