Transistor structure with multi-layer field plate and related method
AssigneeGlobalFoundries U.S. Inc.
InventorKetankumar Harishbhai Tailor
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Abstract
A transistor structure with a multi-layer field plate and related methods are disclosed. The transistor structure includes a dielectric layer that has a thinner portion over a first doped well and a second doped well, and a thicker portion adjacent the thinner portion and over the second doped well. The thicker portion has a height greater than the thinner portion above the doped wells. The transistor includes a first gate structure on the thinner portion and a field plate on the thicker portion of the dielectric layer.
Claims20
A transistor structure, comprising:
- a field plate over a first dielectric layer, the field plate including:
- a first layer including a high dielectric constant metal gate (HKMG) stack, the HKMG stack including a work function metal (WFM) embedded within a high dielectric constant (high-K) material and a metal layer over an upper surface of the high-K material, and
- a second layer over the first layer;
- and
- a gate structure over the first dielectric layer and laterally adjacent to the field plate, the gate structure including:
- a polysilicon layer, and
- a gate spacer laterally between the polysilicon layer and the field plate.
A transistor structure, comprising:
- a field plate over a first dielectric layer, the field plate including:
- a first layer including a high dielectric constant metal gate (HKMG) stack, and
- a second layer over the first layer,
- a hard mask remnant vertically between the first layer and the first dielectric layer;
- and
- a gate structure over the first dielectric layer and laterally adjacent to the field plate, the gate structure including:
- a polysilicon layer, and
- a gate spacer laterally between the polysilicon layer and the field plate.
A method of forming a transistor structure, comprising:
- forming a field plate over a first dielectric layer, the field plate including:
- a first layer including a high dielectric constant metal gate (HKMG) stack, the HKMG stack having a work function metal (WFM) embedded within a high dielectric constant (high-K) material and a metal layer over an upper surface of the high-K material, and
- a second layer over the first layer;
- and
- forming a gate structure over the first dielectric layer and laterally adjacent to the field plate, the gate structure including:
- a polysilicon layer, and
- a gate spacer laterally between the polysilicon layer and the field plate.
Dependencies are inferred from the claim text.