Methods for silicon carbide gate formation

A method of forming a gate structure on a substrate, comprising:

• depositing an amorphous carbon layer on a silicon carbide layer of the gate structure on the substrate to form a capping layer on the silicon carbide layer;
• annealing the silicon carbide layer at a temperature of greater than approximately 1800 degrees Celsius;
• forming a hard mask on the silicon carbide layer by patterning the amorphous carbon layer with a photoresist layer;
• selectively etching a trench structure of the gate structure into the silicon carbide layer using the hard mask with an etch process having a higher etch rate of silicon carbide over amorphous carbon;
• removing the hard mask to expose the silicon carbide layer;
• depositing a silicon dioxide layer of the gate structure on the silicon carbide layer using an atomic layer deposition process at a process temperature of approximately 100 degrees Celsius to approximately 600 degrees Celsius;
• performing at least one interface treatment on the silicon dioxide layer including high temperature, oxygen/nitrogen radical treatment, or an additional oxide deposition;
• depositing a gate oxide layer of the gate structure on the silicon dioxide layer;
• and
• depositing a gate material of the gate structure on the gate oxide layer.

A non-transitory, computer readable medium having instructions stored thereon that, when executed, cause a method for forming a gate structure on a substrate to be performed, the method comprising:

• depositing an amorphous carbon layer on a silicon carbide layer of the gate structure on the substrate to form a capping layer on the silicon carbide layer;
• annealing the silicon carbide layer at a temperature of greater than approximately 1800 degrees Celsius;
• forming a hard mask on the silicon carbide layer by patterning the amorphous carbon layer;
• etching a trench structure of the gate structure into the silicon carbide layer using the hard mask;
• removing the hard mask to expose the silicon carbide layer;
• depositing a silicon dioxide layer of the gate structure on the silicon carbide layer using an atomic layer deposition process;
• performing at least one interface treatment on the silicon dioxide layer;
• depositing a gate oxide layer of the gate structure on the silicon dioxide layer;
• and
• depositing a gate material of the gate structure on the gate oxide layer.