Vertical transistors having at least 50% grain boundaries offset between top and bottom source/drain regions and the channel region that is vertically therebetween

A vertical transistor comprising:

• a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region;
• the top and bottom source/drain regions having polycrystalline crystal grains and grain boundaries between immediately-adjacent of the polycrystalline crystal grains;
• the channel region having channel crystal grains comprising grain boundaries between immediately-adjacent of the channel crystal grains;
• the top source/drain region and the channel region having a top interface and the bottom source/drain region and the channel region having a bottom interface;
• at least 50% of the grain boundaries in the top source/drain region at the top interface being laterally offset from the grain boundaries of the channel crystal grains in the channel region at the top interface;
• and
• at least 50% of the grain boundaries in the bottom source/drain region at the bottom interface being laterally offset from the grain boundaries of the channel crystal grains in the channel region at the bottom interface;
• wherein a plurality of the channel grain boundaries are vertically-elongated crystal grains that individually are directly against both of the top source/drain region and the bottom source/drain region.

A vertical transistor comprising:

• a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region;
• the top and bottom source/drain regions having polycrystalline crystal grains and grain boundaries between immediately-adjacent of the polycrystalline crystal grains;
• the channel region having channel crystal grains comprising grain boundaries between immediately-adjacent of the channel crystal grains;
• the top source/drain region and the channel region having a top interface and the bottom source/drain region and the channel region having a bottom interface;
• at least 50% of the grain boundaries in the top source/drain region at the top interface being laterally offset from the grain boundaries of the channel crystal grains in the channel region at the top interface;
• and
• at least 50% of the grain boundaries in the bottom source/drain region at the bottom interface being laterally offset from the grain boundaries of the channel crystal grains in the channel region at the bottom interface;
• wherein,
• one and only one of the grain boundaries in the top source/drain region at the top interface being laterally aligned with one and only one of the grain boundaries of the channel crystal grains in the channel region at the top interface;
• and
• one and only one of the grain boundaries in the bottom source/drain region at the bottom interface being laterally aligned with one and only one of the grain boundaries of the channel crystal grains in the channel region at the bottom interface.