Using different work-functions to reduce gate-induced drain leakage current in stacked nanosheet transistors

A method of forming an integrated circuit (IC) having transistor devices comprising a first transistor type, the method comprising forming the first transistor type by performing fabrication operations comprising:

• forming a channel stack comprising first stacked, spaced-apart, channel layers;
• wherein a first one of the first stacked, spaced-apart channel layers comprises a first trimmed channel region and first non-trimmed channel regions;
• forming a first source or drain (S/D) region communicatively coupled to the channel stack;
• forming a tunnel extending through the channel stack;
• wherein a first portion of a boundary of the tunnel is defined by the first trimmed channel region;
• wherein the tunnel comprises a central region and a first set of end regions;
• wherein the first set of end regions is closer to the first S/D region than the central region is to the first S/D region;
• forming a first type of work-function metal (WFM) in the first set of end regions, the first WFM having a first work-function (WF);
• and
• forming a second type of WFM in the central region, the second type of WFM having a second WF;
• wherein the first WF is different than the second WF.