US 12,191,351 B1 · Laterally-diffused metal-oxide-semiconductor devices with an air gap

Abstract

Structures for a laterally-diffused metal-oxide-semiconductor device and methods of forming same. The structure comprises a semiconductor substrate including a trench, a source and a drain in the semiconductor substrate, a dielectric layer inside the trench, and a gate in the dielectric layer. The trench has a first sidewall and a second sidewall, the source is adjacent to the first sidewall of the trench, the drain is adjacent to the second sidewall of the trench, and the gate is laterally between the first sidewall of the trench and the second sidewall of the trench. The structure further comprises an air gap in the dielectric layer. The air gap is below the gate, and the air gap is laterally between the first sidewall of the trench and the second sidewall of the trench.

Claims20

Dependent claims

A structure for a laterally-diffused metal-oxide-semiconductor device, the structure comprising:

a semiconductor substrate including a trench, the trench having a first sidewall and a second sidewall;
a first dielectric layer inside the trench, the first dielectric layer comprising a first dielectric material;
a source in the semiconductor substrate, the source adjacent to the first sidewall of the trench;
a drain in the semiconductor substrate, the drain adjacent to the second sidewall of the trench;
a gate in the first dielectric layer, the gate laterally between the first sidewall of the trench and the second sidewall of the trench;
a second dielectric layer comprising a second dielectric material;
and
an air gap in the first dielectric layer, the air gap below the gate, and the air gap laterally between the first sidewall of the trench and the second sidewall of the trench,
wherein the air gap is fully surrounded by the first dielectric material and the second dielectric material.

6 more elements

Dependencies are inferred from the claim text.

Laterally-diffused metal-oxide-semiconductor devices with an air gap

Life of this patent

Laterally-diffused metal-oxide-semiconductor devices with an air gap

Life of this patent

Abstract

Claims20