Method of manufacturing semiconductor structure and semiconductor structure

Abstract

The present disclosure provides a method of manufacturing a semiconductor structure, and a semiconductor structure. The method of manufacturing a semiconductor structure includes: providing a base, where a channel is formed in the base; forming a gate conductive layer, where the gate conductive layer covers a part of the channel; and forming a semiconductor doped layer, where the semiconductor doped layer fills the channel and covers the gate conductive layer, and a doping concentration of the semiconductor doped layer at a side close to a top surface of the gate conductive layer is different from a doping concentration of the semiconductor doped layer at a side away from the top surface of the gate conductive layer.

Dependencies are inferred from the claim text.