US 12,191,339 B2Granted

Light emitting diode and manufacturing method therefor

AssigneeHcp Technology Co., Ltd.

InventorsWenrong Zhuang, Ming Sun, Xiaochao Fu, Jingquan Lu

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Abstract

Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride or an indium tin oxide; and the electrode layer is located on the second-type layer.

Claims9

Dependent claims

A light emitting diode, comprising:

a first-type layer, which comprises a first-type gallium nitride;
a light emitting layer, which is located on the first-type layer and comprises a quantum dot;
a second-type layer, which is located on the light emitting layer and comprises an indium tin oxide (ITO);
an electrode layer, which is located on the second-type layer;
a black matrix, which is located between the first-type layer and the second-type layer and comprises a first window, and the light emitting layer is located within the first window;
and
an insulating layer, which covers an upper surface of the electrode layer, a side surface of the electrode layer, and a side surface of the second-type layer.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/441,123Filed 10 Jun 2020
Priority: WO PCT/CN2020/0775883 Mar 2020
Published: US 2022/0406964 A122 Dec 2022
Granted: 7 Jan 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10H 20/034
Manufacture or treatment: of coatings
H10H 29/142
Comprising multiple light-emitting semiconductor components: two-dimensional arrangements, e.g. asymmetric LED layout
H10H 20/0137
Having light-emitting regions comprising only Group III-V materials: the light-emitting regions comprising nitride materials
H10H 20/018
Of bodies, e.g. forming semiconductor layers: bonding of wafers

Family

US 2022/0406964 A1Pre-grant publication · published 22 Dec 2022
US 12,191,339 B2This patent

From the US filing history. Foreign family members aren’t listed.

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