Semiconductor device with buffer layer and method of forming
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYa Chun Teng, Yun-Wei Cheng, Chien Ming Sung
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Abstract
A semiconductor device includes a pixel array comprising a first pixel and a second pixel. The semiconductor device includes a metal structure overlying a portion of a substrate between the first pixel and the second pixel. The semiconductor device includes a first barrier layer adjacent a sidewall of the metal structure. The semiconductor device includes a passivation layer adjacent a sidewall of the first barrier layer. The first barrier layer is between the passivation layer and the metal structure.
Claims20
A method of forming a semiconductor device, comprising:
- forming a metal structure over a first dielectric layer and overlying a portion of a substrate between a first pixel and a second pixel;
- forming a first barrier layer over the metal structure and the first dielectric layer;
- removing a first portion of the first barrier layer over the first dielectric layer to expose a top surface of the first dielectric layer;
- forming a passivation layer over the top surface of the first dielectric layer after removing the first portion of the first barrier layer;
- and
- forming a color filter over the top surface of the first dielectric layer after forming the passivation layer such that a second portion of the first barrier layer is laterally between the color filter and the metal structure.
A method of forming a semiconductor device, comprising:
- forming a first barrier layer over a first dielectric layer;
- forming a metal structure over the first barrier layer and the first dielectric layer and overlying a portion of a substrate between a first pixel and a second pixel;
- forming a second barrier layer over the metal structure and the first dielectric layer;
- removing a first portion of the second barrier layer over the first dielectric layer to expose a top surface of the first dielectric layer;
- and
- forming a color filter over the top surface of the first dielectric layer after removing the first portion of the second barrier layer such that a second portion of the second barrier layer is laterally between the color filter and the metal structure.
A method of forming a semiconductor device, comprising:
- forming a metal structure over a first dielectric layer and overlying a portion of a substrate between a first pixel and a second pixel;
- forming a second dielectric layer over the metal structure;
- forming a first barrier layer over the metal structure and the first dielectric layer after forming the second dielectric layer;
- removing a first portion of the first barrier layer over the first dielectric layer to expose a top surface of the first dielectric layer;
- and
- forming a color filter over the top surface of the first dielectric layer after removing the first portion of the first barrier layer such that a second portion of the first barrier layer is laterally between the color filter and the metal structure.
Dependencies are inferred from the claim text.