Solid-state image sensor
AssigneeVisEra Technologies Company Limited
InventorsPin-Chia Tseng, Yu-Chi Chang
Life of this patent
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Abstract
A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion units and modulation structures embedded in the photoelectric conversion units. The solid-state image sensor also includes isolation structures disposed between the photoelectric conversion units and a protective layer disposed on the photoelectric conversion units. From the top view of the solid-state image sensor, the photoelectric conversion units and the modulation structures form mosaic patterns, and the ratio of the area of one modulation structure to the area of the corresponding mosaic pattern is between 0.1 and 0.9.
Claims19
A solid-state image sensor, comprising:
- photoelectric conversion units;
- modulation structures embedded in the photoelectric conversion units;
- isolation structures disposed between the photoelectric conversion units;
- and
- a protective layer disposed on the photoelectric conversion units;
- wherein from a top view of the solid-state image sensor, the photoelectric conversion units and the modulation structures form mosaic patterns, a ratio of an area of one of the modulation structures to an area of a corresponding one of the mosaic patterns is between 0.1 and 0.9, and a thickness of the modulation structures is equal to m×λ/2n, where m is a positive integer, λ is a wavelength of a light to be sensed, and n is a refraction index of the modulation structures.
Dependencies are inferred from the claim text.