Array substrate, manufacturing method of array substrate, and display panel

A manufacturing method of an array substrate, comprising following manufacturing steps:

• providing a base substrate, and manufacturing a thin film transistor on the base substrate, wherein the thin film transistor comprises a gate electrode, an active layer, a source electrode and a drain electrode connected to the active layer;
• forming a photosensitive semiconductor layer on an extension section of the drain electrode;
• forming a first insulation layer on the photosensitive semiconductor layer and thin film transistor, and forming a first metal layer with a patterned shape on the first insulation layer, wherein the first metal layer comprises one of a first electrode plate or a second electrode plate;
• and
• forming a second insulation layer on the first metal layer, and forming a second metal layer with a patterned shape on the second insulation layer, wherein the second metal layer comprises another one of the first electrode plate or the second electrode plate, the first electrode plate is electrically connected to the photosensitive semiconductor layer through a via hole, the second electrode plate is electrically connected to the drain electrode through another via hole, and the first electrode plate and the second electrode plate compose a storage capacitor;
• wherein the storage capacitor is disposed on the first insulation layer.

A display panel, comprising an array substrate, wherein the array substrate comprises:

• a substrate;
• a thin film transistor disposed on the substrate and comprising a gate electrode, an active layer, and a source electrode and a drain electrode connected to the active layer;
• a photosensitive sensor, wherein the photosensitive sensor comprises a photosensitive module and a storage module, the photosensitive module comprises a photosensitive semiconductor layer, and the storage module comprises a first electrode plate and a second electrode plate;
• and
• a first insulation layer disposed on the photosensitive semiconductor layer and the thin film transistor, wherein the storage module is disposed on the first insulation layer,
• wherein the photosensitive semiconductor layer is disposed on an extension section of the drain electrode, the first electrode plate is electrically connected to a side of the photosensitive semiconductor layer away from the extension section of the drain electrode, and the second electrode plate is electrically connected to the drain electrode.