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US 12,191,302 B2Granted
III-nitride device
AssigneeInfineon Technologies Americas Corp.
InventorMichael A. Briere
Life of this patent
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Abstract
An integrated semiconductor device includes a silicon body that includes <111> single crystal silicon, a semiconductor device that is disposed within the silicon body, a III-nitride body disposed on the silicon body, and a III-nitride device that is disposed within the III-nitride body, wherein the semiconductor device is operatively coupled to the III-nitride device.
Claims11
An integrated semiconductor device comprising:
- a silicon body that comprises <111> single crystal silicon;
- a semiconductor device that is disposed within the silicon body;
- a III-nitride body disposed on the silicon body;
- and
- a III-nitride device that is disposed within the III-nitride body;
- wherein the semiconductor device is operatively coupled to the III-nitride device.
3 more elements
Dependencies are inferred from the claim text.