Heterogeneous integration of radio frequency transistor chiplets having interconnections to host wafer circuits for optimizing operating conditions

An electronic assembly for heterogeneous integration of radio frequencies (RF) transistor chiplets having interconnections to host wafer circuits, the assembly comprising:

• at least one RF transistor chiplet each having a chiplet circuit including a high-electron-mobility transistor (HEMT) or a heterojunction bipolar transistor (HBT);
• a host wafer having at least one host wafer circuit for the purpose of optimizing operating conditions of the HEMT or HBT, the at least one host wafer circuit including one of:
• first circuitry to provide a DC bias of the HEMT or HBT;
• or
• second circuitry configured to sense radio-frequency operating conditions of the HEMT or HBT;
• a lateral bonding material between side surfaces of the at least one RF transistor chiplet and side surfaces of cavities in the host wafer;
• and
• electrical interconnects between the at least one chiplet and the host wafer, wherein the electrical interconnects electrically connect the host wafer circuit to the chiplet circuit.

An electronic assembly comprising:

• a plurality of RF transistor chiplets each having a chiplet circuit including a high-electron-mobility transistor (HEMT) or a heterojunction bipolar transistor (HBT);
• a host wafer having at least one host wafer circuit for the purpose of tuning the operating bias conditions of the HEMT or HBT, the at least one host wafer circuit including:
• first circuitry to provide a DC bias of the HEMT or HBT;
• and
• second circuitry configured to sense radio-frequency operating conditions of the HEMT or HBT;
• a lateral bonding material between side surfaces of the plurality of RF transistor chiplets and side surfaces of cavities in the host wafer;
• and
• electrical interconnects between the chiplet and the host wafer, wherein the electrical interconnects electrically connect the host wafer circuit to the chiplet circuit.