Optical projection device having a grid structure

An optical projection device, comprising:

• a plurality of LEDs (light-emitting diodes), the LEDs each comprising a semiconductor mesa laterally spaced apart from one another by a grid structure,
• wherein each of the semiconductor mesas comprises an n-type material and a p-type material adjoining at least partly the n-type material,
• wherein the grid structure at least partly laterally surrounds at least the n-type material of each of the semiconductor mesas,
• wherein the grid structure comprises a conductive material that electrically interconnects the n-type material of the semiconductor mesas,
• wherein the grid structure is configured to block optical crosstalk between light emitted by the LEDs,
• wherein the plurality of LEDs are part of a semiconductor wafer,
• wherein the grid structure comprises a grid of intersecting trenches etched into the semiconductor wafer such that the grid of intersecting trenches laterally separates the semiconductor mesas at least partly from one another,
• wherein the conductive material of the grid structure fills the grid of intersecting trenches,
• wherein the grid structure contacts an n-type region or metal region of the semiconductor wafer that is laterally spaced apart from the semiconductor mesas,
• wherein the n-type region or metal region is connected to a cathode electrode of the optical projection device.

An optical projection device, comprising:

• a plurality of LEDs (light-emitting diodes), the LEDs each comprising a semiconductor mesa laterally spaced apart from one another by a grid structure,
• wherein each of the semiconductor mesas comprises an n-type material and a p-type material adjoining at least partly the n-type material,
• wherein the grid structure at least partly laterally surrounds at least the n-type material of each of the semiconductor mesas,
• wherein the grid structure comprises a conductive material that electrically interconnects the n-type material of the semiconductor mesas,
• wherein the grid structure is configured to block optical crosstalk between light emitted by the LEDs,
• wherein the plurality of LEDs are discrete semiconductor dies,
• wherein the grid structure comprises an electrically insulating material that at least partly covers edges of the discrete semiconductor dies,
• wherein the conductive material of the grid structure is disposed on the electrically insulating material such that the electrically insulating material separates the discrete semiconductor dies from the conductive material of the grid structure.

An optical projection device, comprising:

• a plurality of LEDs (light-emitting diodes), the LEDs each comprising a semiconductor mesa laterally spaced apart from one another by a grid structure,
• wherein each of the semiconductor mesas comprises an n-type material and a p-type material adjoining at least partly the n-type material,
• wherein the grid structure at least partly laterally surrounds at least the n-type material of each of the semiconductor mesas,
• wherein the grid structure comprises a conductive material that electrically interconnects the n-type material of the semiconductor mesas,
• wherein the grid structure is configured to block optical crosstalk between light emitted by the LEDs,
• wherein at least some of the semiconductor mesas are recessed below an upper surface of the grid structure to form cavities which are laterally delimited by the grid structure,
• wherein each one of the cavities is filled with a light conversion layer configured to convert a wavelength of light emitted by the semiconductor mesa aligned with the respective cavity.

An optical projection device, comprising:

• a plurality of LEDs (light-emitting diodes), the LEDs each comprising a semiconductor mesa laterally spaced apart from one another by a grid structure, each of the semiconductor mesas comprising an n-type material and a p-type material adjoining at least partly the n-type material, the grid structure at least partly laterally surrounding at least the n-type material of each of the semiconductor mesas, the grid structure comprising a conductive material that electrically interconnects the n-type material of the semiconductor mesas, the grid structure being configured to block optical crosstalk between light emitted by the LEDs;
• an individual anode electrode connected to the p-type region of each one of the semiconductor mesas;
• and
• a common cathode electrode,
• wherein the conductive material of the grid structure electrically connects the common cathode electrode to the n-type region of a group of the semiconductor mesas.