Package structure

A package structure, comprising:

• an interposer substrate;
• a semiconductor die disposed over and electrically connected to the interposer substrate, a coefficient of thermal expansion of dielectric layers of the interposer substrate being greater than a coefficient of thermal expansion of a semiconductor substrate of the semiconductor die, wherein the semiconductor die comprises chamfered edges, at least one chamfered edge among the chamfered edges comprises bevel surfaces, and the bevel surfaces connect at least one root surface of the semiconductor die and a front surface of the semiconductor die;
• an underfill disposed between the semiconductor die and the interposer substrate;
• and
• an insulating encapsulation covering the interposer substrate and laterally encapsulating the semiconductor die and the underfill, wherein the bevel surfaces are in direct contact with the underfill and the insulating encapsulation.

A package structure, comprising:

• an interposer substrate;
• a semiconductor die disposed over and electrically connected to the interposer substrate, and the semiconductor die comprising at least one first edge and at least one second edge, the at least one first edge comprising a chamfered edge or a rounded edge, the at least one second edge being between a side surface of the semiconductor die and a front surface of the semiconductor die;
• a first underfill disposed between the semiconductor die and the interposer substrate;
• and
• an insulating encapsulation covering the interposer substrate and laterally encapsulating the semiconductor die and the first underfill, wherein the chamfered edge or the rounded edge is in direct contact with the first underfill and the insulating encapsulation.