Semiconductor device including electromagnetic interference (EMI) shielding and method of manufacture

A method of manufacturing a semiconductor device, the method comprising:

• forming a redistribution substrate;
• forming a conductive connector in electrical connection with the redistribution substrate, the conductive connector having a first height, a first width, and a first length, the first height being between about 50 μm and about 500 μm, the first width being between about 50 μm and about 500 μm, and the first length being between about 50 μm and about 500 μm;
• placing an encapsulant over the redistribution substrate, the encapsulant extending away from the redistribution substrate a first distance larger than the first height, wherein a first module, a second module, a third module, and a fourth module are embedded in the encapsulant and electrically connected to the redistribution substrate, wherein the first module has a first module height of between about 30 μm and about 800 μm, the second module has a second module height of between about 50 μm and about 1000 μm, the second module height being less than the first module height, the third module has a third module height of between about 30 μm and about 800 μm, the third module height being greater than the second module height, and the fourth module has a fourth module height of between about 50 μm and about 1000 μm, the fourth module height being less than the first module height, the second module height, and the third module height;
• and
• placing a shield extending through the encapsulant to make physical contact with the conductive connector and also extending along a top surface of the encapsulant to be located over the first module and the second module.

A method of manufacturing a semiconductor device, the method comprising:

• placing a plurality of modules onto a substrate, wherein the placing the plurality of modules includes a first system on chip module, a passive module, a second system on chip module, and an integrated passive device;
• placing a conductive connector onto the substrate;
• encapsulating the conductive connector and the plurality of modules with an encapsulant;
• forming an opening through the encapsulant to expose at least a portion of the conductive connector;
• and
• depositing a shield layer over the encapsulant and in the opening to make electrical connection with the conductive connector, the shield layer fully covering sidewalls of the substrate, wherein each portion of the sidewalls of the substrate in physical contact with the shield layer is a dielectric material, wherein a height from a side of the substrate opposite the plurality of modules to a side of the shield layer facing away from the encapsulant and over the encapsulant is between about 50 μm and about 2,000 μm.