Semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJiun Yi Wu, Chen-Hua Yu, Chien-Hsun Chen
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Abstract
A method includes forming a redistribution structure on a carrier, attaching an integrated passive device on a first side of the redistribution structure, attaching an interconnect structure to the first side of the redistribution structure, the integrated passive device interposed between the redistribution structure and the interconnect structure, depositing an underfill material between the interconnect structure and the redistribution structure, and attaching a semiconductor device on a second side of the redistribution structure that is opposite the first side of the redistribution structure.
Claims20
A package, comprising:
- an interconnect structure, the interconnect structure comprising a core substrate;
- a redistribution structure electrically connected to the interconnect structure using first solder joints;
- at least one integrated device attached to a first side of the redistribution structure, wherein the at least one integrated device is between the core substrate and the redistribution structure;
- a first underfill material extending along sidewalls of the at least one integrated device;
- and
- at least one semiconductor device on a second side of the redistribution structure, the at least one semiconductor device electrically connected to the redistribution structure.
A package, comprising:
- a redistribution structure, the redistribution structure comprising a plurality of first layers of conductive routing lines;
- an integrated device attached to a first side of the redistribution structure using solder;
- an interconnect structure attached to the first side of the redistribution structure using solder, the interconnect structure comprising a core substrate and a plurality of second layers of conductive routing lines, wherein the integrated device is between the redistribution structure and the core substrate;
- an insulating material between the redistribution structure and the interconnect structure, wherein the insulating material extends along sidewalls of the integrated device and sidewalls of core substrate;
- and
- a semiconductor package attached to a second side of the redistribution structure.
A method of forming a semiconductor package, the method comprising:
- forming a redistribution structure on a carrier;
- attaching an integrated passive device to the redistribution structure;
- attaching an interconnect structure to the redistribution structure using solder joints, the integrated passive device being between two of the solder joints;
- after attaching the interconnect structure, removing the carrier;
- and
- attaching a semiconductor device to the redistribution structure, wherein the redistribution structure is between the semiconductor device and the integrated passive device.
Dependencies are inferred from the claim text.