Semiconductor package

A semiconductor package, comprising:

• a first redistribution substrate including a stack of dielectric layers, a first redistribution pattern in the stack of dielectric layers, and at least one first redistribution pad electrically connected to the first redistribution pattern, wherein at least a portion of the at least one first redistribution pad is in a hole defined by an uppermost dielectric layer of the stack of dielectric layers;
• a solder ball on a bottom surface of the first redistribution substrate;
• a second redistribution substrate;
• a semiconductor chip between a top surface of the first redistribution substrate and a bottom surface the second redistribution substrate;
• a conductive structure electrically connecting the first redistribution substrate and the second redistribution substrate, and the conductive structure laterally spaced apart from the semiconductor chip and including a first conductive structure and a second conductive structure in direct contact with a top surface of the first conductive structure;
• a conductive seed pattern between a corresponding one of the least one first redistribution pad and the conductive structure;
• and
• a molding layer between the first redistribution substrate and the second redistribution substrate,
• wherein the top surface of the first conductive structure includes a central region and an edge region, and the central region is at a higher level higher than the edge region,
• wherein a material of the first conductive structure and a material of the second conductive structure is different from a material of the solder ball, the solder ball comprises at least one of tin, bismuth, lead, and silver, and the first conductive structure and the second conductive structure comprise copper,
• wherein the first conductive structure includes a pillar and the second conductive structure includes a pillar,
• wherein a connection of the first conductive structure and the second conductive structure comprises copper, and
• wherein the molding layer directly contacts the at least one first redistribution pad and the conductive seed pattern.

A semiconductor package, comprising:

• a first redistribution substrate, the first redistribution substrate including a first dielectric layer and a first redistribution pad at least partially in a first hole defined by a top surface of the first redistribution substrate, the redistribution pad including a first seed pattern, and a first conductive pattern on the first seed pattern, the first dielectric layer including a first photoimageable polymer;
• a solder ball on a bottom surface of the first redistribution substrate;
• a second redistribution substrate, the second redistribution substrate including a second dielectric layer, a second seed pattern, and a second conductive pattern on the second seed pattern, the second dielectric layer including a second photoimageable polymer;
• a semiconductor chip between the top surface of the first redistribution substrate and a bottom surface the second redistribution substrate;
• a conductive structure electrically connecting the first redistribution substrate and the second redistribution substrate, the conductive structure laterally spaced apart from the semiconductor chip and including a first conductive structure and a second conductive structure in direct contact with a top surface of the first conductive structure;
• a conductive seed pattern between the first redistribution pad and the conductive structure;
• and
• a molding layer between the first redistribution substrate and the second redistribution substrate, the molding layer covering at least a sidewall of the semiconductor chip, a sidewall of the conductive seed pattern, and a sidewall of the conductive structure, and exposing a top surface of the conductive structure,
• wherein the bottom surface of the second redistribution substrate is in physical contact with the molding layer,
• wherein a material of the first conductive structure and a material of the second conductive structure is different from a material of the solder ball, the solder ball comprises at least one of tin, bismuth, lead, and silver, and the first conductive structure and the second conductive structure comprise copper,
• wherein the first conductive structure includes a pillar and the second conductive structure includes a pillar,
• wherein a connection of the first conductive structure and the second conductive structure comprises copper, and
• wherein the molding layer directly contacts the first redistribution pad and the conductive seed pattern.