Method of manufacturing heat dissipation substrate with high thermal conductivity for semiconductor device
AssigneesMediatek Inc., National Taiwan University
InventorsMing-Tzong Yang, Hsien-Hsin Lin, Wen-Kai Wan, Chia-Che Chung, Chee-Wee Liu
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Abstract
A semiconductor device and method for forming same. According to an embodiment. The method provides a base substrate, forms a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is between 200 Wm−1K−1 and 1200 Wm−1K−1. This method further forms a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor. The method further removes the base substrate.
Claims18
A semiconductor device mounted on a substrate through solder bumps, comprising:
- a heat dissipation substrate, wherein a thermal conductivity of the heat dissipation substrate is between 200 Wm−1K−1 and 1200 Wm−1K−1;
- and
- a device layer disposed on the heat dissipation substrate, wherein the device layer comprises a transistor, wherein the heat dissipation substrate is formed as a top layer of the semiconductor device and separated from the substrate by the device layer and the solder bumps, wherein the heat dissipation substrate has a bottommost surface located directly above all the solder bumps, and the bottommost surface of the heat dissipation substrate and a top surface of the device layer overlap each other completely.
A method of forming a semiconductor device mounted on a substrate through solder bumps, comprising:
- providing a base substrate;
- forming a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is between 200 Wm−1K−1 and 1200 Wm−1K−1;
- forming a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor;
- removing the base substrate;
- and
- soldering the semiconductor device to the substrate through the solder bumps, such that the heat dissipation substrate is formed as a top layer of the semiconductor device and located farther from the substrate than the device layer and the solder bumps, wherein the heat dissipation substrate has a bottommost surface located directly above all the solder bumps, and the bottommost surface of the heat dissipation substrate and a top surface of the device layer overlap each other completely.
A method of forming a semiconductor device mounted on a substrate through solder bumps, comprising:
- providing a base substrate;
- forming a device layer on the base substrate, wherein the device layer comprises a transistor;
- removing the base substrate;
- attaching the device layer to a heat dissipation substrate, wherein a thermal conductivity of the heat dissipation substrate is between 200 Wm−1K−1 and 1200 Wm−1K−1;
- and
- soldering the semiconductor device to the substrate through the solder bumps, such that the heat dissipation substrate is formed as a top layer of the semiconductor device and located farther from the substrate than the device layer and the solder bumps, wherein the heat dissipation substrate has a bottommost surface located directly above all the solder bumps, and the bottommost surface of the heat dissipation substrate and a top surface of the device layer overlap each other completely.
Dependencies are inferred from the claim text.