Semiconductor package and manufacturing method thereof

A semiconductor package, comprising:

• a circuit substrate;
• first semiconductor dies, disposed on the circuit substrate and electrically connected with the circuit substrate, wherein the first semiconductor dies are disposed side by side and laterally wrapped by an encapsulant, and the first semiconductor dies are spaced apart with a portion of the encapsulant filled between two most adjacent first semiconductor dies;
• second semiconductor dies, disposed on the circuit substrate, located beside the first semiconductor dies and electrically connected with the circuit substrate, wherein the second semiconductor dies are disposed side by side and spaced apart with a gap between two most adjacent second semiconductor dies;
• a frame structure, disposed on the circuit substrate, wherein the frame structure includes a ring portion enclosing the first semiconductor dies and the second semiconductor dies, and a beam portion disposed between the first semiconductor dies and the second semiconductor dies, and the beam portion is connected to the ring portion at both ends of the beam portion;
• a heat sink lid, disposed over the first semiconductor dies and the second semiconductor dies and on the frame structure;
• and
• a bonding material disposed between the heat sink lid and the first semiconductor dies and the second semiconductor dies,
• wherein an open slit that extends through the heat sink lid and the bonding material in a thickness direction exposes the portion of the encapsulant and exposes the gap between the two most adjacent second semiconductor dies.

A manufacturing method of a semiconductor package, comprising:

• providing a circuit substrate;
• mounting semiconductor dies on the circuit substrate, wherein the semiconductor dies are arranged as a column;
• bonding the semiconductor dies to the circuit substrate, wherein the semiconductor dies are spaced apart with a gap between two most adjacent semiconductor dies;
• attaching a beam structure to the circuit substrate beside the column of the semiconductor dies;
• attaching a ring wall on the circuit substrate and surrounding the semiconductor dies, wherein the beam structure extends between and connects with opposite sides of the ring wall;
• applying a joining material onto the semiconductor dies without covering the gap;
• and
• attaching a heat sink lid on the joining material and the semiconductor dies and on the beam structure without covering the gap, wherein a through opening extending through the heat sink lid and the joining material in a thickness direction is formed exposing a portion of the beam portion and the gap.