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US 12,191,222 B2Granted
Integrated fan out device with a filler-free insulating material
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Chih Chen, Sih-Hao Liao, Yu-Hsiang Hu, Hung-Jui Kuo
Life of this patent
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Abstract
A redistribution structure is made using filler-free insulating materials with a high shrinkage rate. As a result, good planarity may be achieved without the need to perform a planarization of each insulating layer of the redistribution structure, thereby simplifying the formation of the redistribution structure.
Claims20
A device comprising:
- a redistribution structure coupled to a conductive feature of a substrate, the redistribution structure comprising:
- a first conductive layer,
- a first insulating layer over the first conductive layer, the first insulating layer comprising a first filler-free insulating material,
- a second conductive layer over the first insulating layer, the second conductive layer coupled to the first conducting layer, and
- a second insulating layer over the second conductive layer, the second insulating layer comprising a second filler-free insulating material, wherein an upper surface of the second insulating layer is wavy, wherein a difference between an average peak of the upper surface and an average valley of the upper surface is between 3 μm and 5 μm;
- and
- a conductive connector electrically coupled to the redistribution structure.
4 more elements
A device comprising:
- a first redistribution structure, the first redistribution structure comprising:
- a first metallization pattern,
- a first insulating layer adjacent and above an upper surface of the first metallization pattern, the first metallization pattern having a first thickness, the first thickness being measured from a bottom surface of the first insulating layer to an upper surface of the first metallization pattern, and
- a second metallization pattern above the first insulating layer, wherein the second metallization pattern extends through the first insulating layer to the first metallization pattern, wherein the first insulating layer has a second thickness between the upper surface of the first metallization pattern and a bottom surface of the second metallization pattern, wherein the second thickness is less than the first thickness;
- and
- an encapsulated die disposed over the first redistribution structure.
3 more elements
A device comprising:
- a carrier;
- a first redistribution structure on the carrier, the first redistribution structure comprising:
- a first metallization pattern on a first side of the carrier, the first metallization pattern having a first thickness over the carrier, a first surface of the first metallization pattern being a closest surface of the first metallization pattern to the carrier in a cross-sectional view,
- a first insulating layer on the first metallization pattern, a bottom surface of the first insulating layer being level with the first surface of the first metallization pattern, the first insulating layer comprising a first filler free material, and
- a second metallization pattern on the first insulating layer, wherein the first insulating layer has a second thickness between the first metallization pattern and the second metallization pattern, wherein the second thickness is less than the first thickness;
- a die on a second side of the carrier opposite the first redistribution structure;
- and
- an encapsulant along sidewalls of the die.
5 more elements
Dependencies are inferred from the claim text.