Hybrid interposer of glass and silicon to reduce thermal crosstalk

A semiconductor package, comprising:

• a hybrid interposer including a first region and a second region, wherein the first region is comprised of low thermal conductive materials, and wherein the second region is comprised of silicon materials or diamond materials;
• a first die on the first region of the hybrid interposer, wherein the first die is directly coupled to the first region of the hybrid interposer;
• a second die on the second region of the hybrid interposer, wherein the second die is directly coupled to the second region of the hybrid interposer;
• and
• an integrated heat spreader (IHS) over the first die, the second die, and the hybrid interposer, wherein the low thermal conductive materials of the first region are comprised of glass materials or one or more thermal conductive materials, wherein the one or more thermal conductive materials have a thermal conductivity of approximately 10 W/mK or less, wherein the hybrid interposer further includes a plurality of first interconnects and a plurality of second interconnects, wherein the plurality of first interconnects vertically extend from a bottom surface of the first region to a top surface of the first region, and wherein the plurality of second interconnects vertically extend from a bottom surface of the second region to a top surface of the second region, wherein the plurality of first interconnects are a plurality of through-glass vias (TGVs), and wherein the plurality of second interconnects are a plurality of through-silicon vias (TSVs), wherein the hybrid interposer further includes a third region, wherein the third region is comprised of the one or more silicon materials, wherein the plurality of second interconnects vertically extend from a bottom surface of the third region to a top surface of the third region, wherein the third region has a footprint that is substantially equal to a footprint of the second region, wherein the third region has a thickness that is substantially equal to a thickness of the second region, wherein the first region has a footprint that is greater than the footprints of the second and third regions, and wherein the first region has a thickness that is substantially equal to or greater than the thicknesses of the second and third regions, wherein the second and third regions are directly disposed on the top surface of the first region, wherein the second and third regions are both positioned adjacent to an outer edge of the first region of the hybrid interposer, wherein the second region is adjacent to the third region, and the second region is separated from the third region by a gap, and wherein the plurality of TSVs of the second and third regions are directly disposed and coupled onto the plurality of TGVs of the first region.