Semiconductor method and device

A method comprising:

• patterning a substrate such that a semiconductor fin protrudes from a major surface of the substrate, wherein the semiconductor fin comprises a first portion and a second portion below the first portion, wherein a first material of the first portion of the semiconductor fin is different from a second material of the second portion of the semiconductor fin, wherein the first material comprises silicon germanium having a first germanium concentration that is in a range from 20 atomic percent to 80 atomic percent;
• depositing a semiconductor liner over the substrate, along the first portion of the semiconductor fin, and along the second portion of the semiconductor fin;
• depositing a dielectric material over the semiconductor liner, the substrate, and the semiconductor fin;
• recessing the dielectric material to form a shallow trench isolation (STI) region adjacent the semiconductor fin, wherein after the recessing the first portion of the semiconductor fin protrudes above a top surface of the STI region;
• and
• etching the semiconductor liner from sidewalls of the first portion of the semiconductor fin.

A device comprising:

• a semiconductor fin extending from a substrate, the semiconductor fin comprising:
• a first portion;
• and
• a second portion below the first portion, wherein the first portion comprises silicon germanium, and the second portion comprises silicon, wherein a germanium concentration of the first portion of the semiconductor fin is in a range from 20 atomic percent to 80 atomic percent;
• a semiconductor liner on sidewalls of the second portion of the semiconductor fin;
• and
• a shallow trench isolation (STI) region adjacent the semiconductor fin, wherein a topmost point of the STI region is at a level that is between a level of a topmost surface of the semiconductor liner and a level of a bottommost surface of the first portion of the semiconductor fin.