Back to results
US 12,191,208 B2Granted
Dual strained semiconductor substrate and patterning
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Shogo Mochizuki, Juntao Li
Life of this patent
Estimating the term…
Abstract
A dielectric layer is on top of a first semiconductor stack. The first semiconductor stack is compressively strained. A second semiconductor stack is on top of the dielectric layer. The second semiconductor stack is tensely strained.
Claims10
A semiconductor structure comprising:
- a dielectric layer on top of a first semiconductor stack, wherein the first semiconductor stack is compressively strained, and wherein the first semiconductor stack comprises Silicon Germanium (SiGe);
- and
- a second semiconductor stack on top of the dielectric layer, wherein the second semiconductor stack is tensely strained.
A semiconductor structure comprising:
- a first silicon germanium (SiGe) layer on top of and in contact with a substrate;
- a first liner layer on top of and in contact with the first SiGe layer;
- a first dielectric layer on top of and in contact with the first liner layer;
- a second liner layer on top of and in contact with the first dielectric layer;
- a second dielectric layer on top of and in contact with the second liner layer;
- and
- a second silicon germanium (SiGe) layer on top of and in contact with the second dielectric layer.
4 more elements
Dependencies are inferred from the claim text.