US 12,191,201 B2 · Semiconductor device and method for manufacturing semiconductor device

Abstract

An adhesive layer (18) in which the same number of first and second layers (14,16) having conductivity are alternately laminated in order on a semiconductor substrate (10). A metal layer (24) is formed on the adhesive layer (18). The first layer (14) is composed of a material containing an element composing the semiconductor substrate (10). The second layer (16) has higher adhesion to the metal layer (24) than the first layer (14). The adhesive layer (18) has four or more layers including the first and second layers (14,16). Among the first layers (14) and the second layers (16) constituting the adhesive layer (18), excluding the second layer (16) contacting the metal layer (24), the first layer (14) contacting the semiconductor substrate (10) has the largest film thickness, and excluding the first layer (14) contacting the semiconductor substrate (10), the second layer (16) contacting the metal layer (24) has the largest film thickness.

Claims6

Dependent claims

A semiconductor device comprising:

a semiconductor substrate including a first surface and a second surface that oppose each other;
an adhesive layer in which the same number of first and second layers having conductivity are alternately laminated in order on the first surface;
and
a metal layer formed on the adhesive layer,
wherein the first layer is composed of a material containing an element composing the semiconductor substrate,
the second layer has higher adhesion to the metal layer than that of the first layer,
the adhesive layer has four or more layers including the first and second layers,
among the first layers and the second layers constituting the adhesive layer, excluding the second layer that contacts the metal layer, the first layer that contacts the semiconductor substrate has the largest film thickness, and
among the first layers and the second layers, excluding the first layer that contacts the semiconductor substrate, the second layer that contacts the metal layer has the largest film thickness.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method for manufacturing semiconductor device

Life of this patent

Semiconductor device and method for manufacturing semiconductor device

Life of this patent

Abstract

Claims6