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US 12,191,193 B2Granted
Method of manufacturing semiconductor device and film forming apparatus
AssigneeTokyo Electron Limited
InventorTatsuya Yamaguchi
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor includes adjusting a temperature of a substrate having a recess formed therein and accommodated in a container to a temperature within a range of 200 degrees C. or higher and 280 degrees or lower, and laminating a polyurea film in the recess in the substrate by supplying isocyanate gas and amine gas into the container.
Claims9
A method of manufacturing a semiconductor, the method comprising:
- adjusting a temperature of a substrate having recesses formed therein and accommodated in a container to a temperature within a first temperature range of 220 degrees C. or higher and 280 degrees or lower, the recesses including a first recess with a width and a second recess with a width wider than the width of the first recess;
- laminating polyurea films in the first recess and the second recess in the substrate at the temperature within the first temperature range by supplying isocyanate gas and amine gas into the container;
- removing the polyurea films by stopping supplying the isocyanate gas and the amine gas while maintaining the substrate at the temperature within the first temperature range, the removing the polyurea films being performed such that the polyurea film laminated in the second recess is thermally decomposed;
- laminating a sealing film on the substrate;
- and
- desorbing the polyurea film in the first recess by heating the substrate to a temperature within a second temperature range, to form an air gap in the first recess.
3 more elements
A film forming apparatus comprising:
- a container in which a substrate having a recess formed therein is accommodated;
- a gas supply configured to supply isocyanate gas and amine gas into the container;
- a heater configured to heat the substrate;
- and
- a controller, wherein the controller is configured to execute:
- controlling the heater to adjust a temperature of the substrate having recesses formed therein and accommodated in the container to a temperature within a first temperature range of 220 degrees C. or higher and 280 degrees or lower, the recesses including a first recess with a width and a second recess with a width wider than the width of the first recess;
- laminating polyurea films in the first recess and the second recess in the substrate at the temperature within the first temperature range by controlling the gas supply to supply the isocyanate gas and the amine gas into the container;
- removing the polyurea films by controlling the gas supply to stop supplying the isocyanate gas and the amine gas while maintaining the substrate at the temperature within the first temperature range, the removing the polyurea films being performed such that the polyurea film laminated in the second recess is thermally decomposed;
- laminating a sealing film on the substrate by controlling the gas supply;
- and
- desorbing the polyurea film in the first recess by controlling the heater to heat the substrate to a temperature within a second temperature range, to form an air gap in the first recess.
8 more elements
Dependencies are inferred from the claim text.