Method of forming engineered wafers
OwnerBing Huinventor
Life of this patent
Estimating the term…
Abstract
Ions are implanted into a first wafer through a top side, generating an ion damaged layer underneath the substrate film of the first wafer. A stress inducing layer is applied on a surface on the top side of the first wafer on one of the ion implanted side and the opposite side. The substrate film is separated from the first wafer at the ion damaged layer. the separated substrate film is bonded to a second wafer at a surface on one of a first side and a second side that this opposite of the first side of the second wafer to form an engineered wafer.
Claims18
A method of forming a semiconductor engineered wafer, the method comprising:
- implanting ions into a donor substrate through a top side, generating an ion damaged layer underneath a substrate film of the donor substrate, wherein the ion dose is controlled based on the ion energy so as to minimize surface damage to the top side of the donor substrate;
- forming a stress inducing layer on a surface on one of the ion implanted side and the opposite side of the donor substrate, the stress inducing layer for introducing compressive stress in the donor substrate;
- separating the substrate film from the donor substrate at the ion damage layer in response to the compressive stress;
- and
- bonding the separated substrate film after separation to a second wafer at a surface on one of a first side and a second side, the second side being opposite of the first side of the second wafer.
A method of forming a semiconductor engineered wafer, the method comprising:
- providing a donor substrate comprising a first surface on an ion implanted side, a second surface on a side opposite from the ion implanted side, and an ion damaged layer underneath a substrate film of the donor substrate, wherein the ion damaged layer is formed by ion implantation, and wherein the ion dose of the ion implantation is controlled based on the ion energy of the ion implantation so as to minimize surface damage to the first surface of the donor substrate;
- forming a stress inducing layer on a surface on one of the ion implanted side and the opposite side of the donor substrate, the stress inducing layer for introducing compressive stress in the donor substrate;
- and
- separating the substrate film from the donor substrate at the ion damage layer in response to the compressive stress;
- wherein the semiconductor engineered wafer comprises at least the separated substrate film.
A method of forming a semiconductor engineered wafer, the method comprising:
- implanting ions into a donor substrate through a top side, generating an ion damaged layer underneath a substrate film of the donor substrate, wherein the ion dose is controlled based on the ion energy so as to minimize surface damage to the top side of the donor substrate;
- forming a stress inducing layer on a surface on one of the ion implanted side and the opposite side of the donor substrate, the stress inducing layer for introducing compressive stress in the donor substrate;
- and
- separating the substrate film from the donor substrate at the ion damage layer in response to the compressive stress;
- wherein the semiconductor engineered wafer comprises at least the separated substrate film.
A method of forming a semiconductor engineered wafer, the method comprising:
- providing a donor substrate comprising a first surface on an ion implanted side, a second surface on a side opposite from the ion implanted side, and an ion damaged layer underneath a substrate film of the donor substrate, wherein the ion damaged layer is formed by ion implantation, and wherein the ion dose of the ion implantation is controlled based on the ion energy of the ion implantation so as to minimize surface damage to the first surface of the donor substrate;
- forming a stress inducing layer on the second surface of the donor substrate, the stress inducing layer for introducing compressive stress in the donor substrate;
- wherein the substrate film can be separated from the donor substrate at the ion damage layer in response to the compressive stress.
Dependencies are inferred from the claim text.