Systems and methods for faceplate temperature control

A semiconductor processing system comprising:

• a chamber body comprising sidewalls and a base, the chamber body defining an interior volume;
• a substrate support extending through the base of the chamber body, wherein the substrate support is configured to support a substrate within the interior volume;
• a faceplate positioned within the interior volume of the chamber body, wherein the faceplate defines a plurality of apertures through the faceplate;
• a faceplate heater seated on the faceplate, wherein the faceplate heater comprises:
• a first heater coil extending a first radial distance from center of the faceplate and proximate a first area of the faceplate, and
• a second heater coil extending a second radial distance from center of the faceplate and proximate a second area of the faceplate, wherein the first radial distance and second radial distance are the same;
• and
• a sheet of thermally conducting material extending between the faceplate heater and the faceplate.