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US 12,191,157 B2Granted
Manufacturing method of semiconductor memory device
AssigneeSK hynix Inc.
InventorsSeung Cheol Lee, Dae Min Kim, Dae Sung Kim, Sang Seob Lee, Hyun Woo Jin
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Abstract
A method of manufacturing a semiconductor memory device includes alternately stacking sacrificial layers and interlayer insulating layers over a lower structure, forming a slit passing through the sacrificial layers and the interlayer insulating layers, removing the sacrificial layers through the slit through a wet etching process, and removing, through a dry etching process, a byproduct that is produced at ends of the interlayer insulating layers during the wet etching process.
Claims11
A method of manufacturing a semiconductor memory device, the method comprising:
- alternately stacking sacrificial layers and interlayer insulating layers over a lower structure;
- forming a slit passing through the sacrificial layers and the interlayer insulating layers;
- removing the sacrificial layers through the slit through a wet etching process;
- and
- removing, through a dry etching process, a byproduct that is produced at ends of the interlayer insulating layers during the wet etching process.
2 more elements
Dependencies are inferred from the claim text.