Semiconductor structures and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Yuan Lee, Chih-Min Hsiao, Chien-Wen Lai, Shih-Ming Chang
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Abstract
The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a substrate; depositing a mask layer over the substrate; forming a mandrel pattern over the mask layer; forming a spacer pattern around the mandrel pattern; removing the mandrel pattern; and applying at least one directional etching operation along a first direction to etch two opposing ends of the spacer pattern and form a first spacer feature and a second spacer feature apart from each other.
Claims20
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate;
- depositing a mask layer over the substrate;
- forming a mandrel pattern over the mask layer;
- forming a spacer pattern around the mandrel pattern;
- removing the mandrel pattern;
- and
- applying at least one directional etching operation along a first direction to etch two opposing ends of the spacer pattern and form a first spacer feature and a second spacer feature apart from each other.
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate;
- forming a mask layer over the substrate;
- forming a mandrel pattern over the mask layer, wherein the mandrel pattern extends along a first direction;
- forming a spacer pattern around the mandrel pattern;
- removing the mandrel pattern to form an opening defined by the spacer pattern, wherein the spacer pattern has a closed contour;
- and
- applying a directional etching operation along the first direction to etch two opposing sidewalls of the spacer pattern.
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate;
- forming at least one target pattern on the substrate, wherein the at least one target pattern extends along a first direction;
- forming at least one sacrificial pattern adjacent to the at least one target pattern, wherein the at least one sacrificial pattern extends along a second direction perpendicular to the first direction;
- and
- applying a directional etching operation along the first direction to trim two ends of the at least one target pattern.
Dependencies are inferred from the claim text.