Method for manufacturing semiconductor structure, semiconductor structure, and memory
AssigneeChangxin Memory Technologies, Inc.
InventorJunbo Pan
Life of this patent
Estimating the term…
Abstract
The present application provides a method for manufacturing a semiconductor structure, a semiconductor structure, and a memory. The method for manufacturing a semiconductor structure includes the following steps: providing a substrate, and forming a stabilizing layer on the substrate; forming a stabilizing structure consisting of a plurality of linear structures and grooves among the linear structures; forming a hard mask layer covering the stabilizing structure; forming a mask pattern connected to a top of the linear structure and an inner wall of the groove on the hard mask layer; and transferring the mask pattern to the substrate.
Claims13
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate, and forming a stabilizing layer on the substrate;
- forming a stabilizing structure consisting of a plurality of linear structures and grooves among the linear structures on the stabilizing layer;
- forming a hard mask layer covering the stabilizing structure;
- forming a mask pattern connected to a top of the linear structures and an inner wall of the grooves on the hard mask layer;
- transferring the mask pattern to the substrate;
- and
- removing the mask pattern and the stabilizing structure;
- and,
- wherein forming the mask pattern connected to the top of the linear structures and the inner wall of the grooves on the hard mask layer comprises:
- etching the hard mask layer to form a plurality of hard mask layer strips, wherein thehard mask layer strips are arranged at intervals to form the mask pattern;
- wherein a preset included angle is formed between a length direction of the hard mask layer strips and a length direction of the linear structures.
Dependencies are inferred from the claim text.