Method of manufacturing semiconductor structure

A method, comprising:

• disposing a semiconductor structure over a monolithic plate, wherein the plate includes a first recess indented from a top surface of the plate and a second recess indented from a bottom surface of the first recess, the top surface of the plate is at a first elevation, and the bottom surface of the first recess is at a second elevation below the first elevation, and a thickness of the semiconductor structure is greater than a depth of the first recess;
• contacting the semiconductor structure with a sidewall of the first recess, wherein the semiconductor structure includes a sidewall, and a portion of the sidewall of the semiconductor structure is above the top surface of the plate;
• and
• disposing a priming material over a top surface of the semiconductor structure.

A method, comprising:

• disposing a semiconductor structure over an integrally formed plate in a housing, wherein the plate includes a planar top surface at a first elevation and a first recess indented from the top surface;
• moving the semiconductor structure toward the plate until a peripheral portion of a bottom surface of the semiconductor structure contacts a first portion of the top surface of the plate proximal to the first recess, wherein the peripheral portion of the bottom surface of the semiconductor structure and the first portion of the top surface are at the first elevation;
• and
• forming a priming layer over a top surface of the semiconductor structure, wherein at least a second portion of the top surface of the first plate is exposed from the semiconductor structure during the formation of the priming material, wherein the second portion is farther away from the first recess than the first portion is, and the second portion is aligned with the first portion at the first elevation.