Semiconductor device and formation method thereof
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsChia-Che Chung, Chia-Jung Tsen, Chee-Wee Liu
Life of this patent
Estimating the term…
Abstract
A method of forming a semiconductor device includes forming a semiconductor strip extending above a semiconductor substrate, forming shallow trench isolation (STI) regions on opposite sides of the semiconductor strip, recessing a portion of the semiconductor strip, etching the STI regions to form a recess in the STI regions, forming a first thermal conductive layer in the recess, forming a source/drain epitaxy structure on the first thermal conductive layer, and forming a gate stack across the semiconductor strip and extending over the STI regions.
Claims20
A method of forming a semiconductor device, comprising:
- forming a semiconductor strip extending above a semiconductor substrate;
- forming shallow trench isolation (STI) regions on opposite sides of the semiconductor strip;
- recessing a portion of the semiconductor strip;
- etching the STI regions to form a recess in the STI regions;
- forming a first thermal conductive layer in the recess, wherein forming the first thermal conductive layer comprises:
- depositing a first thermal conductive material filling into the recess in the STI regions;
- etching back the first thermal conductive material;
- forming a patterned photoresist over the etched back first thermal conductive material;
- and
- etching the first thermal conductive material using the patterned photoresist as a mask;
- forming a source/drain epitaxy structure on the first thermal conductive layer;
- and
- forming a gate stack across the semiconductor strip and extending over the STI regions.
A method of forming a semiconductor device, comprising:
- forming a semiconductor strip extending above a front-side of a semiconductor substrate, wherein the semiconductor substrate has a back-side opposite to the front-side;
- forming shallow trench isolation (STI) regions on opposite sides of the semiconductor strip;
- recessing a portion of the semiconductor strip;
- after recessing the portion of the semiconductor strip, forming a mask layer on the STI regions;
- forming a patterned photoresist over the mask layer;
- etching the STI regions using the mask layer and the patterned photoresist as an etch mask to form a recess in the STI regions;
- forming a dielectric layer on the recessed portion of the semiconductor strip;
- forming a source/drain epitaxy structure on the dielectric layer, wherein the source/drain epitaxy structure is in contact with the dielectric layer;
- and
- forming a gate stack across the semiconductor strip and extending over the STI regions.
A method of forming a semiconductor device, comprising:
- forming a semiconductor strip on a front-side of a semiconductor substrate;
- forming shallow trench isolation (STI) regions on the semiconductor substrate;
- forming a gate crossing the semiconductor strip;
- forming a first thermal conductive layer over the semiconductor strip, wherein the first thermal conductive layer has a thermal conductivity greater than 1.4 W/m·K;
- and
- forming source/drain epitaxy structures on opposite sides of the gate, wherein the first thermal conductive layer laterally surrounds a bottom of the source/drain epitaxy structures;
- forming a back-end-of-line (BEOL) stack on a front-side of the semiconductor substrate and being electrically connected to the gate or the source/drain epitaxy structures;
- and
- forming a through-substrate via (TSV) penetrating through a back-side of the semiconductor substrate opposite to the front-side, wherein the TSV has a first edge opposite to a second edge of the source/drain epitaxy structures, and the first edge and the second edge have a lateral distance in a range from 0.1 μm to 100 μm.
Dependencies are inferred from the claim text.