Semiconductor device and manufacturing method thereof
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University, National Taiwan Normal University
InventorsChun-Yi Chou, Po-Hsien Cheng, Tse-An Chen, Miin-Jang Chen
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Abstract
A method includes forming a mask layer above a substrate. The substrate is patterned by using the mask layer as a mask to form a trench in the substrate. An isolation structure is formed in the trench, including feeding first precursors to the substrate. A bias is applied to the substrate after feeding the first precursors. With the bias turned on, second precursors are fed to the substrate. Feeding the first precursors, applying the bias, and feeding the second precursors are repeated.
Claims20
A method comprising:
- forming a mask layer above a substrate;
- patterning the substrate by using the mask layer as a mask to form a trench in the substrate;
- and
- forming an isolation structure in the trench, comprising:
- feeding first precursors to the substrate;
- applying a bias to the substrate for a first duration time after feeding the first precursors;
- with the bias turned on, feeding second precursors to the substrate for a second duration time shorter than the first duration time of applying the bias;
- and
- repeating feeding the first precursors, applying the bias, and feeding the second precursors.
A method comprising:
- forming a mask layer above a substrate;
- patterning the substrate by using the mask layer as a mask to form a trench in the substrate;
- and
- forming an isolation structure in the trench by using an atomic layer deposition (ALD) process, the ALD process comprises one or more repetitions of an ALD cycle, the ALD cycle comprising:
- applying a bias to the substrate;
- during applying the bias to the substrate, feeding first precursors to the substrate such that a deposition rate of the first precursors over the substrate is greater than a deposition rate of the first precursors over the mask layer;
- turning off the bias;
- and
- after turning off the bias, feeding second precursors to the substrate.
A method comprising:
- forming a mask layer over a substrate;
- etching the substrate by using the mask layer as an etch mask to form semiconductor fins;
- and
- performing a deposition process to deposit a dielectric material over the semiconductor fins, the deposition process comprising one or more repetitions of a deposition cycle, the deposition cycle comprising:
- feeding first precursors to the substrate;
- applying a bias to the substrate;
- and
- with the bias turned on, feeding second precursors to the substrate, wherein a deposition rate of the second precursors over the substrate is greater than a deposition rate of the second precursors over the mask layer.
Dependencies are inferred from the claim text.