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US 12,191,143 B2Granted
Semiconductor device and method for forming the same
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsJian-Zhi Huang, Yun-Hsuan Hsu, I-Chih Ni, Chih-I Wu
Life of this patent
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Abstract
A plasma enhanced chemical vapor deposition (PECVD) method includes loading a wafer having a magnetic layer thereon into a processing chamber equipped with a radio frequency (RF) system, introducing an aromatic hydrocarbon precursor into the processing chamber, and turning on an RF source of the RF system to decompose the aromatic hydrocarbon precursor into active radicals at a frequency greater than about 1000 Hz to form a graphene layer over the magnetic layer.
Claims20
A plasma enhanced chemical vapor deposition (PECVD) method, comprising:
- loading a wafer having a magnetic layer thereon into a processing chamber equipped with a radio frequency (RF) system, the RF system connected to an inductive coil winding in a multiple-turn cylindrical configuration around a portion of the processing chamber, the inductive coil surpassing a length of the wafer in an axial extension direction of the inductive coil, wherein loading the wafer is performed such that the wafer is within the portion of the processing chamber wound by the inductive coil, and the inductive coil directly surrounds the wafer, the wafer has a substrate, a first dielectric layer over the substrate, a metal contact in the first dielectric layer, and a second dielectric layer over the metal contact and having a trench exposing the metal contact, and the magnetic layer is conformally formed over the second dielectric layer and the metal contact exposed from the trench of the second dielectric layer;
- introducing an aromatic hydrocarbon precursor into the processing chamber;
- and
- turning on an RF source of the RF system to decompose the aromatic hydrocarbon precursor into active radicals at a frequency greater than about 1000 Hz to form a graphene layer over the magnetic layer, wherein turning on the RF source of the RF system heats the magnetic layer.
1 more element
A plasma enhanced chemical vapor deposition (PECVD) method, comprising:
- loading a wafer having a magnetic layer thereon into a processing chamber equipped with a radio frequency (RF) system, the RF system connected to an inductive coil winding in a multiple-turn cylindrical configuration around a portion of the processing chamber, wherein loading the wafer allows a maximum dimension of the wafer for being in parallel with an axial extension direction of the inductive coil, and wherein the wafer has a transistor, a source/drain contact over a source/drain region of the transistor, and a dielectric layer over the source/drain contact and having a trench exposing the source/drain contact, and the magnetic layer is conformally formed over the dielectric layer and the source/drain contact exposed from the trench of the dielectric layer;
- introducing a first aromatic hydrocarbon precursor into the processing chamber;
- turning on an RF source of the RF system to decompose the first aromatic hydrocarbon precursor into first active radicals at a first frequency greater than about 1000 Hz to form a first graphene layer over the magnetic layer;
- and
- forming a conductive material over the first graphene layer and in the trench of the dielectric layer.
2 more elements
A plasma enhanced chemical vapor deposition (PECVD) method, comprising:
- loading a wafer having a magnetic layer thereon into a processing chamber equipped with a radio frequency (RF) system, wherein the wafer has a substrate, a first dielectric layer over the substrate, a metal contact in the first dielectric layer, and a second dielectric layer over the metal contact and having a trench exposing the metal contact, and the magnetic layer is conformally formed over the second dielectric layer and the metal contact exposed from the trench of the second dielectric layer;
- introducing an aromatic hydrocarbon precursor into the processing chamber;
- turning on an RF source of the RF system to decompose the aromatic hydrocarbon precursor into active radicals at a frequency greater than about 1000 Hz to form a first graphene layer over the magnetic layer;
- and
- after forming the first graphene layer, forming a metal layer over the first graphene layer, such that the first graphene layer is sandwiched between the magnetic layer and the metal layer.
2 more elements
Dependencies are inferred from the claim text.