Semiconductor structure and method for manufacturing semiconductor structure

A method for manufacturing a semiconductor structure, comprising:

• providing a substrate comprising a core N-channel Metal Oxide Semiconductor (NMOS) area, a core P-channel Metal Oxide Semiconductor (PMOS) area and a peripheral NMOS area;
• forming a first barrier layer on the surface of the substrate in the core PMOS area;
• performing oxidation treatment on the substrate in the core PMOS area to convert a part of a thickness of the substrate in the core PMOS area into an oxide layer;
• removing the first barrier layer in the core PMOS area and then removing the oxide layer, a thickness of the remaining substrate in the core PMOS area is less than a thickness of the substrate in the core NMOS area;
• forming a first semiconductor layer on the remaining substrate in the core PMOS area, wherein a hole mobility in the first semiconductor layer is greater than a hole mobility in the substrate in the core PMOS area;
• forming a gate dielectric layer located on the first semiconductor layer and on the substrate in the core NMOS area and the peripheral NMOS area;
• and
• forming a gate on the gate dielectric layer.