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US 12,191,141 B2Granted
Plasma etching method using perfluoroisopropyl vinyl ether
AssigneeAjou University Industry-Academic Cooperation Foundation
InventorsChang-Koo Kim, Jun-Hyun Kim
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Abstract
A plasma etching method is disclosed. The plasma etching method comprises: a first step of vaporizing liquid perfluoroisopropyl vinylether (PIPVE); a second step of supplying, to a plasma chamber in which an object to be etched is arranged, the vaporized PIPVE and a discharge gas comprising argon gas; and a third step of discharging the discharge gas so as to generate plasma, and using same so as to plasma-etch the object to be etched.
Claims8
A plasma etching method comprising:
- a first step of vaporizing liquid perfluoroisopropyl vinyl ether (PIPVE);
- a second step of supplying a discharge gas containing the vaporized PIPVE and argon gas to a plasma chamber in which an etching target is disposed;
- and
- a third step of discharging the discharge gas to generate plasma and of performing plasma etching on the etching target using the generated plasma.
1 more element
Dependencies are inferred from the claim text.