Method for manufacturing semiconductor device and substrate processing apparatus

A method for manufacturing a semiconductor device, comprising:

• supplying a silicon-containing gas to a substrate having a recess formed in a surface of the substrate to deposit a silicon film in the recess;
• supplying, to the substrate, a first etching gas having a first etching profile in which an amount of etching for an upper portion of the recess in a depth direction and an amount of etching for a lower portion of the recess in the depth direction are different from each other, to etch the silicon film in the recess;
• executing at least once a cycle including additionally depositing the silicon film on the already deposited silicon film etched by the first etching gas;
• executing at least once a first cycle including supplying the first etching gas to the substrate to etch the silicon film in the recess and additionally depositing the silicon film on the already deposited silicon film;
• supplying, to the substrate, a second etching gas having a second etching profile that is different from the first etching profile of the first etching gas to etch the silicon film in the recess;
• additionally depositing the silicon film on the already deposited silicon film etched by the second etching gas;
• and
• executing at least once a second cycle including supplying the second etching gas to the substrate to etch the silicon film in the recess and additionally depositing the silicon film on the already deposited silicon film,
• wherein the first etching gas includes chlorine gas and nitrogen gas, and the second etching gas includes chlorine gas and nitrogen gas, and
• wherein a mixing ratio of the chlorine gas and the nitrogen gas in the second etching gas is different from the first etching gas.