US 12,191,116 B2 · Plasma processing apparatus and plasma processing method

Abstract

A plasma processing apparatus includes a processing chamber configured to accommodate a substrate, a gas supply configured to supply a processing gas into the processing chamber, a power supply configured to supply power to the processing chamber to generate plasma such that the substrate is processed by using the generated plasma, and a control device configured to control the power supply. The control device controls the power supply to perform a process of supplying a first power including a frequency component within a first band having a first bandwidth to the processing chamber when the plasma is generated from the processing gas, and a process of supplying a second power including a frequency component within a second band having a second bandwidth smaller than or equal to the first bandwidth to the processing chamber when the substrate is processed by using the generated plasma.

Claims12

Dependent claims

A plasma processing apparatus comprising:

a processing chamber configured to accommodate a substrate;
a gas supply configured to supply a processing gas into the processing chamber;
a power supply configured to supply power to the processing chamber to generate plasma from the processing gas supplied into the processing chamber such that the substrate is processed by using the generated plasma;
and
a control circuit configured to control the power supply,
wherein the control circuit controls the power supply to perform (a) a first process of supplying a first power including a frequency component within a first band having a first bandwidth to the processing chamber, when the plasma is generated from the processing gas, and (b) a process of supplying a second power including a frequency component within a second band having a second bandwidth to the processing chamber, and not supplying the first power, when the substrate is processed by using the generated plasma,
wherein the second bandwidth is smaller than the first bandwidth.

4 more elements

A plasma processing method as a method of controlling power in a plasma processing apparatus including a processing chamber configured to accommodate a substrate, a gas supply configured to supply a processing gas into the processing chamber, a power supply configured to supply power to the processing chamber to generate plasma from the processing gas supplied into the processing chamber such that the substrate is processed by using the generated plasma, and a control circuit configured to control the power supply and perform the plasma processing method that comprises:

(a) a process of supplying a first power including a frequency component within a first band having a first bandwidth to the processing chamber, in response to the plasma being generated from the processing gas;
and (b) a process of supplying a second power including a frequency component within a second band having a second bandwidth to the processing chamber, and not supplying the first power, in response to the substrate being processed by using the generated plasma, wherein the second bandwidth is smaller than the first bandwidth.

Dependencies are inferred from the claim text.

Plasma processing apparatus and plasma processing method

Life of this patent

Plasma processing apparatus and plasma processing method

Life of this patent

Abstract

Claims12