Buried thermistor and method of fabricating the same
AssigneesHongQiSheng Precision Electronics (QinHuangDao) Co., Ltd., Avary Holding (Shenzhen) Co., Limited., Garuda Technology Co., Ltd.
InventorsJian Wang, Jun Dai, Xiao-Juan Zhang
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Abstract
A buried thermistor includes a lower substrate, an upper substrate, and a number of thermistor stacks. Each thermistor stack includes two resistor subjects. Each resistor subject includes a base layer, a medium layer, a metal layer, a resistor layer, a nanometal layer, and a conductive layer. Applicable material of the resistor layer becomes more diverse by disposing the number of thermistor stacks, and the buried thermistor shows variable thermal sensitivity.
Claims15
A buried thermistor, comprising:
- a lower substrate;
- an upper substrate disposed above the lower substrate;
- and
- a plurality of thermistor stacks disposed between the upper substrate and the lower substrate, wherein each of the plurality of thermistor stacks comprises two resistor subjects, a through-hole via separates the two resistor subjects, and each of the resistor subjects comprises:
- a base layer;
- a medium layer disposed over the base layer;
- a resistor layer disposed over the medium layer;
- a metal layer disposed on the resistor layer;
- a nanometal layer disposed on a portion of the metal layer and a terminal portion of the resistor layer, wherein the metal layer is not disposed on the terminal portion of the resistor layer;
- and
- a conductive layer, covering a portion of an upper surface of the nanometal layer and extending to a sidewall of the nanometal layer and a sidewall of the resistor layer, wherein the terminal portions of the resistor layers of the two resistor subjects surround the through-hole via.
A method of fabricating a buried thermistor, comprises:
- fabricating a plurality of thermistor stacks, comprises:
- forming a stack layer, wherein the stack layer comprises a medium layer, a resistor layer and a metal layer, and the metal layer comprises a recess;
- coating a nanometal layer within the recess and on a portion of the metal layer surrounding the recess;
- forming a through-hole via in the nanometal layer, wherein the through-hole via extends through the nanometal layer and the stack layer, thereby separating the nanometal layer and the stack layer into a first portion and a second portion;
- depositing two conductive layers, respectively, on a portion of a top surface of the nanometal layer of the first portion and the second portion, and extending on a sidewall of the first portion and a side wall of the second portion, respectively;
- and
- laminating a base layer on bottom of the first portion and the second portion, respectively;
- fabricating an upper substrate and a lower substrate;
- and
- binding the upper substrate, the plurality of thermistor stacks and the lower substrate, wherein the plurality of thermistor stacks are located between the upper substrate and the lower substrate.
Dependencies are inferred from the claim text.