Voltage generation circuit

A voltage generation circuit that generates a first current having a first temperature-dependent characteristic in which a current value thereof changes with a predetermined change in temperature, and a second current having a second temperature-dependent characteristic different from the first temperature-dependent characteristic, the voltage generation circuit comprising:

• a first power supply line to which a first power supply voltage is supplied;
• a second power supply line to which a second power supply voltage lower than the first power supply voltage is supplied;
• an output terminal;
• a first variable resistor through which the second current flows, and a second variable resistor through which a third current flows;
• a first current path from the first power supply line to a first node between the first variable resistor and the second variable resistor;
• and
• a second current path from a second node between the second variable resistor and the first power supply line to the second power supply line, wherein:
• the first variable resistor and the second variable resistor are connected in series between the first power supply line and the second power supply line and between the output terminal and the second power supply line;
• the second temperature-dependent characteristic is a characteristic in which a current value of the second current does not change with the predetermined change in temperature;
• the third current has a current value that is based on a difference between a current value of the first current and a current value of the second current;
• and
• when a current supplied to the first node through the first current path is the first current, the first current also flows through the second current path.

A semiconductor memory device according to comprising:

• a memory cell array;
• and
• a voltage generation circuit configured to generate voltages necessary to carry out operations on one or more memory cells of the memory cell array, and to generate a first current having a first temperature-dependent characteristic in which a current value thereof changes with a predetermined change in temperature, a second current having a second temperature-dependent characteristic different from the first temperature-dependent characteristic, and a third current having a third temperature-dependent characteristic in which a current value thereof changes in reverse to the first temperature-dependent characteristic with the predetermined change in temperature, wherein the voltage generation circuit includes:
• a first power supply line to which a first power supply voltage is supplied;
• a second power supply line to which a second power supply voltage lower than the first power supply voltage is supplied;
• a first variable resistor and a second variable resistor connected in series;
• a first current path from the first power supply line to a first node between the first variable resistor and the second variable resistor;
• a second current path from a second node between the second variable resistor and the first power supply line to the second power supply line;
• and
• a third current path from the first node to the second power supply line, wherein:
• the second temperature-dependent characteristic is a characteristic in which a current value of the second current does not change with the predetermined change in temperature;
• the second current flows through the first variable resistor, and a fourth current having a current value that is based on a difference between a current value of the first current and a current value of the second current, flows through the second variable resistor;
• when the first current is supplied to the second node, a current flowing through the first current path has a current value that is n times the current value of the second current, where n is a positive number excluding 1, and the second current flows through the second current path, and the first current flows through the third current path;
• and
• when the third current is supplied to the second node, the current flowing through the first current path has a current value that is n times the current value of the second current, and the second current flows through the second current path, and the third current flows through the third current path.

A semiconductor memory device comprising:

• a memory cell array;
• and
• a voltage generation circuit configured to generate voltages necessary to carry out operations on one or more memory cells of the memory cell array, and to generate a first current having a first temperature-dependent characteristic in which a current value thereof changes with a predetermined change in temperature, a second current having a second temperature-dependent characteristic different from the first temperature-dependent characteristic, and a third current having a third temperature-dependent characteristic in which a current value thereof changes in reverse to the first temperature-dependent characteristic with the predetermined change in temperature, wherein the voltage generation circuit includes:
• a first power supply line to which a first power supply voltage is supplied;
• a second power supply line to which a second power supply voltage lower than the first power supply voltage is supplied;
• a first variable resistor and a second variable resistor connected in series;
• a first current path from the first power supply line to a first node between the first variable resistor and the second variable resistor;
• and
• a second current path from a second node between the second variable resistor and the first power supply line to the second power supply line, wherein:
• the second temperature-dependent characteristic is a characteristic in which a current value of the second current does not change with the predetermined change in temperature;
• the second current flows through the first variable resistor, and a fourth current having a current value that is based on a difference between a current value of the first current and a current value of the second current, flows through the second variable resistor;
• when a current supplied to the first node through the first current path is the first current, the first current also flows through the second current path, and
• when the current supplied to the first node through the first current path is the third current, the third current also flows through the second current path.