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US 12,190,967 B2Granted
Voltage generation circuit and semiconductor memory device
AssigneeKioxia Corporation
InventorTakumi Fujimoto
Life of this patent
Estimating the term…
Abstract
A voltage generation circuit includes a plurality of charge pumps connected to a first node, and a control circuit that controls the number of active charge pumps among the plurality of charge pumps based on a period in which a voltage of the first node satisfies a condition.
Claims14
A voltage generation circuit comprising:
- a plurality of charge pumps each connected to a first node;
- a control circuit configured to control a number of active charge pumps among the plurality of charge pumps based on a period in which a voltage of the first node satisfies a predetermined condition;
- and
- wherein the control circuit is configured to reduce the number of active charge pumps based on a first period in which the voltage of the first node is at least a first voltage in a state where at least two charge pumps among the plurality of charge pumps are active.
1 more element
Dependencies are inferred from the claim text.