Dynamic step voltage level adjustment

A non-transitory computer readable medium comprising instructions, which when executed by a processing device, cause the processing device to perform operations comprising:

• receiving a request to execute a program operation on a set of memory cells;
• determining that a programming voltage level associated with a programming pulse of a first set of programming pulses associated with a first step voltage level satisfies a condition, wherein the condition is satisfied when the programming voltage level is greater than or equal to a programming voltage threshold level;
• and
• causing a second set of programming pulses corresponding to a second step voltage level to be applied to a wordline associated with the set of memory cells in response to the condition being satisfied.

A method comprising:

• receiving, by a processing device, a request to execute a programming operation on a set of memory cells;
• causing a first set of programming pulses corresponding to a first step voltage level to be applied to one or more wordlines associated with the set of memory cells;
• determining that a programming voltage level associated with a programming pulse of the first set of programming pulses satisfies a condition, wherein the condition is satisfied when the programming voltage level is greater than or equal to a programming voltage threshold level;
• and
• causing a second set of programming pulses corresponding to a second step voltage level to be applied to the one or more wordlines associated with the set of memory cells in response to the condition being satisfied.