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AssigneeYangtze Memory Technologies Co., Ltd.
InventorsXueqing Huang, Wei Huang, Xing Zhou, Chan Wang, Kang Li, Cong Luo, Fengxiang Gao
Estimating the term…
A memory device includes a memory cell array including memory blocks and a peripheral circuit coupled to the memory cell array. Each memory block includes memory strings each including dummy cells and select transistors, bit lines coupled to the memory strings, select lines including first select lines and second select lines, and one or more dummy word lines. Each select line coupled to the select transistors. The first select lines are closer to the bit lines than the second select lines. Each dummy word line is coupled to the respective dummy cells. The dummy word lines include a first dummy word line adjacent to either the first select lines or the second select lines. The peripheral circuit is configured to apply a turn-on voltage to all the first select lines, and apply a program voltage to the first dummy word line.
A memory device, comprising:
A memory system, comprising:
A method for programming a memory device, the memory device comprising a memory cell array comprising memory blocks, each memory block comprising:
Dependencies are inferred from the claim text.