Semiconductor memory device and method of manufacturing the semiconductor memory device

A semiconductor memory device comprising:

• a plurality of interconnect layers stacked above a substrate and spaced apart from each other in a first direction;
• a memory pillar configured to penetrate the plurality of interconnect layers in the first direction;
• a first member and a second member each having a longitudinal direction set to a second direction intersecting the first direction when viewed from a top, the first member and the second member being arranged in the second direction and penetrating the plurality of interconnect layers in the first direction;
• and
• a dividing portion provided between the first member and the second member,
• wherein the dividing portion includes a plurality of insulating layers spaced apart from each other in the first direction,
• the plurality of insulating layers each include a first portion and a second portion,
• the first portion is provided between the first member and the second portion,
• the second portion is provided between the first portion and the second member, and
• the first portion and the second portion each have an individual arc shape when viewed from the top and are in contact with each other.