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AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., Tsmc Nanjing Company, Limited, Tsmc China Company Limited
InventorsHe-Zhou Wan, Xiu-Li Yang, Mu-Yang Ye, Yan-Bo Song
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A memory device includes a first transistor, a second transistor and a third transistor. The first transistor is coupled to a first word line at a first node. The second transistor is coupled to a second word line different from the first word line at a second node. A control terminal of the first transistor is coupled to a control terminal of the second transistor. The third transistor is coupled between a ground and a third node which is coupled to each of the first node and the second node. In a layout view, each of the first transistor and the second transistor has a first length along a direction. The first transistor, the third transistor and second transistor are arranged in order along the direction. A method is also disclosed herein.
A memory device, comprising:
A memory device, comprising:
A method, comprising:
Dependencies are inferred from the claim text.