Magnetoresistive random access memory device having a metal layer doped with a magnetic material

A magnetoresistive random access memory device, comprising:

• a pinned layer;
• a tunnel barrier layer on the pinned layer;
• a free layer structure on the tunnel barrier layer;
• and
• an upper oxide layer on the free layer structure;
• wherein the free layer structure includes:
• a first magnetic layer,
• a first metal insertion layer on the first magnetic layer, the first metal insertion layer including a first non-magnetic metal material doped with a first magnetic material,
• a second magnetic layer on the first metal insertion layer,
• a second metal insertion layer on the second magnetic layer, the second metal insertion layer including a second non-magnetic metal material doped with a second magnetic material, and
• a third magnetic layer on the second metal insertion layer;
• and
• wherein the first magnetic material doped into the first metal insertion layer has a structure including particles extending in a vertical direction between the first magnetic layer and the second magnetic layer, and
• wherein the second magnetic material doped into the second metal insertion layer has a structure including particles extending in a vertical direction between the second magnetic layer and the third magnetic layer.

A magnetoresistive random access memory device, comprising:

• a pinned layer;
• a tunnel barrier layer on the pinned layer;
• a free layer structure on the tunnel barrier layer;
• and
• an upper oxide layer on the free layer structure,
• wherein the free layer structure includes:
• a first magnetic layer having perpendicular magnetic anisotropy and including a ferromagnetic material,
• a first metal insertion layer on the first magnetic layer, the first metal insertion layer including a first non-magnetic metal material doped with a first magnetic material,
• a second magnetic layer on the first metal insertion layer, the second magnetic layer having perpendicular magnetic anisotropy and including a ferromagnetic material,
• a second metal insertion layer on the second magnetic layer, the second metal insertion layer including a second non-magnetic metal material doped with a second magnetic material, and
• a third magnetic layer on the second metal insertion layer, the third magnetic layer having perpendicular magnetic anisotropy and including a ferromagnetic material;
• and
• wherein the first magnetic material doped into the first metal insertion layer has a structure including particles extending in a vertical direction between the first magnetic layer and the second magnetic layer, and
• wherein the second magnetic material doped into the second metal insertion layer has a structure including particles extending in a vertical direction between the second magnetic layer and the third magnetic layer.