Magnetic exchange coupled MTJ free layer having low switching current and high data retention

A magnetic tunnel junction (MTJ) storage element comprising:

• a first reference layer having a first fixed magnetization direction;
• a first tunnel barrier layer;
• a free layer on an opposite side of the first tunnel barrier layer from the first reference layer;
• a second tunnel barrier on an opposite side of the free layer from the first tunnel barrier;
• and
• a second reference layer having a second fixed magnetization direction, where the second reference layer is on an opposite side of the second tunnel barrier from the free layer;
• where the free layer comprises:
• a first region comprising a first material configured to include a first predetermined magnetic moment and a first switchable magnetization direction;
• a second region comprising a second material configured to include a second predetermined magnetic moment and a second switchable magnetization direction;
• and
• a first spacer material between the first region and the second region, where the first spacer material is configured to provide magnetic exchange coupling between the first region and the second region;
• where the first predetermined magnetic moment is configured to be lower than the second predetermined magnetic moment;
• where the MTJ storage element is configured such that, during a write operation of the MTJ storage element, a direction of the first switchable magnetization direction changing causes a direction of the second switchable magnetization direction to change.