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US 12,184,243 B2Granted
Semiconductor device
AssigneeMurata Manufacturing Co., Ltd.
InventorsMikiko Fukasawa, Satoshi Goto, Shunji Yoshimi, Yuji Takematsu, Mitsunori Samata
Life of this patent
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Abstract
A second member is joined in surface contact with a first surface of a first member including a semiconductor region made from an elemental semiconductor. The second member includes a radio-frequency amplifier circuit made from a compound semiconductor. A conductive protrusion projects from the second member toward a side opposite to the first member. The first member includes a temperature measurement element that detects a temperature.
Claims20
A semiconductor device comprising:
- a first member having a first surface and including a semiconductor region made from an elemental semiconductor;
- a second member joined in surface contact with the first surface of the first member and including a radio-frequency amplifier circuit made from a compound semiconductor;
- and
- a conductive protrusion projecting from the second member toward a side opposite to the first member,
- wherein the first member includes a temperature measurement element configured to detect a temperature.
2 more elements
Dependencies are inferred from the claim text.