Light emitting device

A light emitting package comprising:

• a substrate;
• a first conductivity-type semiconductor layer disposed on the substrate;
• a mesa disposed on the first conductivity-type semiconductor layer, the mesa comprising a second conductivity-type semiconductor layer and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;
• a first contact electrode contacting the first conductivity-type semiconductor layer;
• a second contact electrode disposed on the mesa and contacting the second conductivity-type semiconductor layer;
• a passivation layer covering the first contact electrode, the mesa, and the second contact electrode, the passivation layer including a first opening disposed on the first contact electrode and a second opening disposed on the second contact electrode;
• a first bump electrode and a second bump electrode electrically connected to the first contact electrode and the second contact electrode through the first and second openings of the passivation layer, respectively;
• a first anti-step pattern disposed between the first contact electrode and the first bump electrode;
• and
• a second anti-step pattern disposed between the second contact electrode and the second bump electrode,
• wherein:
• the first bump electrode and the second bump electrode are disposed on the mesa;
• the passivation layer is disposed between the first bump electrode and the second contact electrode;
• the first contact electrode includes a reflective material;
• the active layer is configured to emit light in a wavelength range of ultraviolet;
• a portion of the first opening is surrounded with a side surface of the mesa, and another portion of the first opening is not surrounded with the side surface of the mesa;
• and
• the first anti-step pattern is disposed in the first opening and the second anti-step pattern is disposed in the second opening.

A light emitting package comprising:

• a substrate;
• a first conductivity-type semiconductor layer disposed on the substrate;
• a mesa disposed on the first conductivity-type semiconductor layer, the mesa comprising a second conductivity-type semiconductor layer and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;
• a first contact electrode contacting the first conductivity-type semiconductor layer;
• a second contact electrode disposed on the mesa and contacting the second conductivity-type semiconductor layer;
• a passivation layer covering the first contact electrode, the mesa, and the second contact electrode, the passivation layer including a first opening disposed on the first contact electrode and a second opening disposed on the second contact electrode;
• a first bump electrode and a second bump electrode electrically connected to the first contact electrode and the second contact electrode through the first and second openings of the passivation layer, respectively;
• a first anti-step pattern disposed between the first contact electrode and the first bump electrode;
• and
• a second anti-step pattern disposed between the second contact electrode and the second bump electrode,
• wherein:
• the first bump electrode and the second bump electrode are disposed on the mesa;
• the passivation layer is disposed between the first bump electrode and the second contact electrode;
• the active layer is configured to emit light in a wavelength range of ultraviolet;
• a portion of the first opening is surrounded with a side surface of the mesa, and another portion of the first opening is not surrounded with the side surface of the mesa;
• and
• the first anti-step pattern is disposed in the first opening and the second anti-step pattern is disposed in the second opening.